preliminary CEDM7001E surface mount n-channel enhancement-mode silicon mosfet sot-883l case central semiconductor corp. tm r1 (16-march 2007) description: the central semiconductor CEDM7001E is an enhancement-mode n-channel field effect transistor, manufactured by the n-channel dmos process, designed for high speed pulsed amplifier and driver applications. this mosfet offers low r ds(on) and low theshold voltage. marking code: CEDM7001E: e bottom view top view features: ? power dissipation 100mw ? low package profile, 0.4mm ? low r ds(on) ? low threshold voltage ? logic level compatible ? small, tlp? 1x0.6mm, sot-883l leadless surface mount package applications: ? load/power switches ? power supply converter circuits ? battery powered portable equipment maximum ratings (t a =25c) symbol units drain-source voltage v ds 20 v gate-source voltage v gs 10 v continuous drain current (steady state) i d 100 ma continuous drain current i d 200 ma power dissipation p d 100 mw operating and storage junction temperature t j , t stg -65 to +150 c electrical characteristics (t a =25c unless otherwise noted) symbol test conditions min typ max units i gssf v gs =10v, v ds =0v 1.0 a i gssr v gs =10v, v ds =0v 1.0 a i dss v ds =20v, v gs =0v 1.0 a bv dss v gs =0v, i d =100a 20 v v gs(th) v ds =v gs , i d =250a 0.6 0.9 v r ds(on) v gs =4.0v, i d =100ma 1.0 2.0 ? y fs v ds =10v, i d =100ma 100 ms c rss v ds =3.0v, v gs =0, f=1.0mhz tbd pf c iss v ds =3.0v, v gs =0, f=1.0mhz tbd pf c oss v ds =3.0v, v gs =0, f=1.0mhz tbd pf t on v dd =3.0v, v gs =2.5v, i d =10ma tbd ns t off v dd =3.0v, v gs =2.5v, i d =10ma tbd ns
preliminary central semiconductor corp. tm r1 (16-march 2007) sot-883l - mechanical outline lead code: 1) gate 2) source 3) drain CEDM7001E surface mount n-channel enhancement-mode silicon mosfet
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